Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Contact Plating  

Tin

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

71W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

43A Tc

Turn Off Delay Time  

49 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 50μA

Series  

HEXFET®

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

Published  

2007

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

71W

Case Connection  

DRAIN

Turn On Delay Time  

6.3 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

15.8m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1150pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

40ns

Vgs (Max)  

±20V

Fall Time (Typ)  

47 ns

Continuous Drain Current (ID)  

43A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Recovery Time  

33 ns

Length  

10.668mm

Height  

4.826mm

Width  

9.65mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free